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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU941ZPFI DESCRIPTION *With TO-3PML package *DARLINGTON *High breakdown voltage APPLICATIONS *High ruggedness electronic ignitions PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open base Open collector VALUE 350 5 15 30 1 5 65 175 -65~175 UNIT V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 2.3 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACT ERISTICS Tj=25 unless otherwise specified PARAMETER Clamping voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=0.1 A ;IB=0 IC=8A; IB=100m A IC=10A; IB=250m A IC=12A; IB=300m A IC=8A; IB=100m A IC=10A; IB=250m A IC=12A; IB=300m A VCE=300V; IB=0 TC=125 VEB=5V; IC=0 IC=5A ; VCE=10V IF=10A 300 MIN 350 BU941ZPFI SYMBOL VCL VCE(sat-1) VCE(sat-2) VCE(sat-3) VBE(sat-1) VBE(sat-2) VBE(sat-3) ICEO IEBO hFE VF TYP. MAX 500 1.8 1.8 2.0 2.2 2.5 2.7 0.1 0.5 20 UNIT V V V V V V V mA mA 2.5 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU941ZPFI Fig.2 outline dimensions 3 |
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